Handbook of Porous Silicon by Leigh Canham

By Leigh Canham

The guide of Porous Silicon brings jointly the services of a giant, overseas group of virtually a hundred educational researchers, engineers and product builders from throughout electronics, medication, foodstuff and patron care to summarize the sphere in its entirety with a hundred and fifty chapters and 5000 references. the quantity offers five elements which disguise fabrication innovations, fabric homes, characterization ideas, processing and purposes. a lot recognition was once given some time past to its luminescent houses, yet more and more it's the biodegradability, mechanical, thermal and sensing features which are attracting recognition. the quantity is split into focussed info experiences with, anywhere attainable, quantitative instead of qualitative descriptions of either homes and function. The ebook is focused at undergraduates, postgraduates and skilled researchers

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Chem Mater 24:2998–3003 Yamani Z, Thompson WH, Abu-Hassan L, Nayfeh MH (1997) Ideal anodization of silicon. Appl Phys Lett 70(25):3404–3406 Zangooie S, Jansson R, Arwin H (1998) Microstructural control of porous silicon by electrochemical etching in mixed HCL/HF solutions. Appl Surf Sci 136:123–130 Porous Silicon Formation by Galvanic Etching Kurt W. Kolasinski Contents Introduction: Classes of Etching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J Electrochem Soc 147:1026–1030 Gorostiza P, Allongue P, Dı´az R, Morante JR, Sanz F (2003) Electrochemical characterization of the open-circuit deposition of platinum on silicon from fluoride solutions. J Phys Chem B 107:6454–6461 Harada Y, Li X, Bohn PW, Nuzzo RG (2001) Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays. J Am Chem Soc 123:8709–8717 Hines MA (2003) In search of perfection: understanding the highly defect-selective chemistry of anisotropic etching.

Therefore, postprocessing steps in MEMS fabrication routinely lead to the exposure of metal/Si interfaces to HF. Pierron et al. (2005) found that oxide layers up to ~80 nm thick could form at room temperature during manufacturing due to a galvanic effect between highly doped n-type Si and Au. Electron microscopy confirmed that the layers were porous and composed of SiO2 covering Si cores. Concentrated HF solutions are usually associated with oxide dissolution. However, the measured current density-voltage behavior of the galvanic couple in their device corresponded to the transition region in which por-Si formation was accompanied by oxide growth.

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