By W. Prasad Kodali
This useful, more advantageous moment variation will train you to prevent expensive post-design electromagnetic compatibility (EMC) fixes. once more, V. Prasad Kodali offers a entire creation to EMC and provides present technical details on resources of electromagnetic interference (EMI), EMC/EMI measurements, applied sciences to manage EMI, machine simulation and layout, and foreign EMC criteria.
Features extra to this moment variation include:
- Two new chapters overlaying EMC computing device modeling and simulation and sign integrity
- Expanded assignments on the shut of every chapter
- Illustrative examples that increase comprehension
- A new appendix that lists a specific bibliography, very important criteria, and websites correct to EMC/EMI
Engineering Electromagnetic Compatibility, moment Edition is gifted in a concise, elementary structure that mixes a rigorous solutions-based, mathematical therapy of the underlying theories of EMC with the latest useful functions. it really is ultimate as a table reference for practising engineers and as a textbook for college kids who have to comprehend the shape and serve as of EMC and its relevance to a number of structures.
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Additional info for Engineering Electromagnetic Compatibility: Principles, Measurements, and Technologies
Chem Mater 24:2998–3003 Yamani Z, Thompson WH, Abu-Hassan L, Nayfeh MH (1997) Ideal anodization of silicon. Appl Phys Lett 70(25):3404–3406 Zangooie S, Jansson R, Arwin H (1998) Microstructural control of porous silicon by electrochemical etching in mixed HCL/HF solutions. Appl Surf Sci 136:123–130 Porous Silicon Formation by Galvanic Etching Kurt W. Kolasinski Contents Introduction: Classes of Etching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J Electrochem Soc 147:1026–1030 Gorostiza P, Allongue P, Dı´az R, Morante JR, Sanz F (2003) Electrochemical characterization of the open-circuit deposition of platinum on silicon from fluoride solutions. J Phys Chem B 107:6454–6461 Harada Y, Li X, Bohn PW, Nuzzo RG (2001) Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays. J Am Chem Soc 123:8709–8717 Hines MA (2003) In search of perfection: understanding the highly defect-selective chemistry of anisotropic etching.
Therefore, postprocessing steps in MEMS fabrication routinely lead to the exposure of metal/Si interfaces to HF. Pierron et al. (2005) found that oxide layers up to ~80 nm thick could form at room temperature during manufacturing due to a galvanic effect between highly doped n-type Si and Au. Electron microscopy confirmed that the layers were porous and composed of SiO2 covering Si cores. Concentrated HF solutions are usually associated with oxide dissolution. However, the measured current density-voltage behavior of the galvanic couple in their device corresponded to the transition region in which por-Si formation was accompanied by oxide growth.